The etching process of boron nitride by alkali and alkaline earth fluorides under high pressure and high temperature

• Appropriate etch processes of hBN and cBN under HPHT are proposed.
• The degree of the crystallization of hBN was decreased.
• A special cBN growth mechanism with a triangular unit is proposed.
• Plate-shape cBN crystals with large ratio of length to thickness were obtained.
• A strategy provides useful guidance for controlling the cBN morphology.

Some new etching processes of hexagonal boron nitride (hBN) and cubic boron nitride (cBN) under high pressure and high temperature in the presence of alkali and alkaline earth fluorides have been discussed. It is found that hBN is etched distinctly by alkali and alkaline earth fluorides and the morphology of hBN is significantly changed from plate-shape to spherical-shape. Based on the “graphitization index” values of hBN, the degree of the crystallization of hBN under high pressure and high temperature decreases in the sequence of LiF > CaF2 > MgF2. This facilitates the formation of high-quality cBN single crystals. Different etch steps, pits, and islands are observed on cBN surface, showing the strong etching by alkali and alkaline earth fluorides and the tendency of layer-by-layer growth. A special layer growth mechanism of cBN with a triangular unit has been found. Furthermore, the morphologies of cBN crystals are apparently affected by a preferential surface etching of LiF, CaF2 and MgF2. Respectively, the plate-shape and tetrahedral cBN crystals can be obtained in the presence of different alkali and alkaline earth fluorides.

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