Electrical and optical properties of Ti doped ZnO films grown on glass substrate by atomic layer deposition

• Ti doped ZnO films were prepared on Corning XG glass substrate by ALD.
• The electrical properties and optical properties were systematically investigated.
• An optimized Ti doped ZnO films had low resistivity and excellent optical transmittance.

Titanium doped zinc oxide (Ti doped ZnO) films were prepared by atomic layer deposition methods at a deposition temperature of 200 °C. The Ti content in Ti doped ZnO films was varied from 5.08 at.% to 15.02 at.%. X-ray diffraction results indicated that the crystallinity of the Ti doped ZnO films had degraded with increasing Ti content. Transmission electron microscopy was used to investigate the microstructural evolution of the Ti doped ZnO films, showing that both the grain size and crystallinity reduced with increasing Ti content. The electrical resistivity of the Ti doped ZnO films showed a minimum value of 1.6 × 10−3 Ω cm with the Ti content of 6.20 at.%. Furthermore, the Ti doped ZnO films exhibited excellent transmittance.

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