Morphology and magneto-transport properties of electron doped La0.85Te0.15MnO3 thin film deposited on LaAlO3 substrate

• La0.85Te0.15MnO3 manganite thin film is deposited on LaAlO3 using PLD technique.
• Film is deposited at 750 °C, and is highly crystalline, single phase and c-axis oriented.
• The film consists of grains with an average diameter of 60 nm.
• Resistivity plots display double insulator-metal transitions.
• XPS results confirm the electron doped (n-type) nature of the film.

We report the structural, electronic transport and X-ray photoemission spectroscopic study of 100 nm thin film of La0.85Te0.15MnO3 grown on (0 0 1) LaAlO3 single crystal substrate by pulsed laser deposition. XRD results confirm that the film has good crystalline quality, single phase, and has a c-axis orientation. The atomic force microscopic (AFM) results showed that the film consists of grains with an average diameter of 60 nm. The resistivity measurement showed double insulator-metal transitions in absence and as well as in presence of the magnetic field. The resistivity peaks are ascribed to the intrinsic contribution of LTMO film and the tunnelling of spin-polarized electrons at grain boundaries. X-ray photoemission spectroscopy measurements suggest that Te ions are in the Te4+ state, while the Mn ions are forced to stay in the Mn2+ and Mn3+ valence state.

Resistivity versus temperature plots of La0.85Te0.15MnO3 thin film under the applied magnetic field of 0 T, 5 T and 8 T.Figure optionsDownload as PowerPoint slide