Optical and field emission properties of layer-structure GaN nanowires

• The layer-structure GaN nanowires with hexagonal-shaped cross-sections are produced via a process based on the CVD method.
• The diameter of the layer-structure GaN nanowire gradually decreases from ∼500 nm to ∼200 nm along the wire axis.
• The layer-structure GaN nanowire film possesses good field emission property.

A layer-structure gallium nitride (GaN) nanowires, grown on Pt-coated n-type Si (1 1 1) substrate, have been synthesized using chemical vapor deposition (CVD). The results show: (1) SEM indicates that the geometry structure is layer-structure. HRTEM indicates that GaN nanowire’s preferential growth direction is along [0 0 1] direction. (2) The room temperature PL emission spectrum of the layer-structure GaN nanowires has a peak at 375 nm, which proves that GaN nanowires have potential application in light-emitting nano-devices. (3) Field-emission measurements show that the layer-structure GaN nanowires film has a low turn-on field of 4.39 V/μm (at room temperature), which is sufficient for electron emission devices, field emission displays and vacuum nano-electronic devices. The growth mechanism for GaN nanowires has also been discussed briefly.

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