Fabrication and characterization of n-ZnO:Eu/p-ZnO:(Ag, N) homojunction by spray pyrolysis

• The n-ZnO:Eu/p-ZnO:(Ag, N) homojunction is fabricated and characterized.
• Low resistive and stable p-type ZnO films are achieved by dual acceptor-doping.
• Homojunction with best dual-doped ZnO film shows good rectifying characteristics.
• The fabricated ZnO homojunction is suitable for optoelectronic devices.

In the present study, the authors report the fabrication of ZnO homojunction by the deposition of 2 at.% Eu doped ZnO (n-ZnO:Eu) layer grown over the 4 at.% Ag–N dual acceptor doped ZnO (p-ZnO:(Ag, N)) layer by spray pyrolysis technique. The as-grown n-type and p-type ZnO films on glass substrates have been characterized by Hall measurements, X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), UV–vis and luminescence spectroscopy techniques. Hall measurement shows that 4 at.% ZnO:(Ag, N) film exhibits p-type conductivity with high hole concentration of 2.17 × 1018 cm−3 and n-type conductivity is observed in the ZnO:Eu film. The current–voltage characteristics measured from the two-layer structure show typical rectifying characteristics of p–n homojunction with a low turn on voltage of about 1.85 V.

In this paper authors report the fabrication of ZnO homojunction by the deposition of 2 at.% Eu doped ZnO (n-ZnO:Eu) layer grown over the 4 at.% Ag–N dual acceptor doped ZnO (p-ZnO:(Ag, N)) layer by spray pyrolysis technique. The as-grown n-type and p-type ZnO films on glass substrates have been characterized by Hall measurements, X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), UV–vis and luminescence spectroscopy techniques. Hall measurement shows that 4 at.% ZnO:(Ag, N) film exhibits p-type conductivity with high hole concentration of 2.17 × 1018 cm−3 and n-type conductivity is observed in the ZnO:Eu film. The current–voltage characteristics measured from the two-layer structure show typical rectifying characteristics of p–n homojunction with a low turn on voltage of about 1.85 V. I–V characteristics of the n-ZnO:Eu/p-ZnO:(Ag, N) homojunction.Figure optionsDownload as PowerPoint slide