Microstructures, magnetic and electric properties of diluted magnetic semiconductors InTe1−x Fex (Cox)

InTe compound doped by 10% of Fe or Co respectively was synthesized. X-ray diffraction (XRD), transmission electron microscope (TEM), scanning electron microscope (SEM), energy dispersive X-ray (EDX), vibrating sample magnetometer (VSM) and Kiethley electrometer were used for characterizing the prepared samples. XRD show the presence of InTe0.9Fe0.1 or InTe0.9Co0.1 together with minor In4Te3 phase. InTe0.9Fe0.1 is ferromagnetic with high Curie and high blocking temperature, while InTe0.9Co0.1 is antiferromagnetic with two high Neels temperatures. σRT of InTe0.9Fe0.1 and InTe0.9Co0.1 are greater than those of InTe. The higher conductivity is due to the higher carrier's density obtained from the interaction of the sp-d orbitals, of the electric and magnetic system. The presence of In4Te3 minor phase and different kinds of defects are taking major roles in the formation of high Tc ferromagnetism and antiferromagnetism.

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► The prepared InTe0.9Fe0.1 was found to be ferromagnetic at room temperature and can be characterized as diluted magnetic semiconductors.
► The presence of staking faults, various types of defects, strained lattice, grain boundaries and the impurity of minor non-magnetic phase were suggested to participate in high temperature ferromagnetism.