Charge defects-induced electrical properties in bismuth ferrite bilayered thin films

• The concentration of charge defects could be tailored by changing the deposition temperature.
• Bilayers endure an orientation transition with increasing deposition temperature.
• Enhanced electrical behavior is demonstrated for these bilayers with low charge defects.
• Bilayers demonstrate good ferroelectric behavior of 2Pr ~ 138.2 μC/cm2 and 2Ec ~ 657.3 kV/cm.

Effects of charge defects on electrical properties of BiFeO3/Bi0.90La0.10Fe0.85Zn0.15O3 (BFO/BLFZO) bilayered thin films are investigated, and the concentration of charge defects is controlled by changing their deposition temperatures during sputtering. It is of great interest to note that these bilayers endure an orientation transition from (1 0 0) to (1 1 0) with increasing deposition temperatures. An enhanced dielectric, ferroelectric, and fatigue behavior has been demonstrated in these bilayers deposited at an optimum growth window. A better electrical behavior of 2Pr ~ 138.2 μC/cm2, 2Ec ~ 657.3 kV/cm, εr ~ 189, and tan δ ~ 2.72% has been demonstrated in BFO/BLFZO bilayers, and the underlying physical mechanism is also addressed.

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