Carbon nanotube based pressure sensor for flexible electronics

• The electromechanical change of vertically aligned carbon nanotubes.
• Fabrication of CNT field-effect transistor on flexible substrate.
• CNT based FET integrated active pressure sensor.
• The integrated device yields an increase in the source-drain current under pressure.

A pressure sensor was developed based on an arrangement of vertically aligned carbon nanotubes (VACNTs) supported by a polydimethylsiloxane (PDMS) matrix. The VACNTs embedded in the PDMS matrix were structurally flexible and provided repeated sensing operation due to the high elasticities of both the polymer and the carbon nanotubes (CNTs). The conductance increased in the presence of a loading pressure, which compressed the material and induced contact between neighboring CNTs, thereby producing a dense current path and better CNT/metal contacts. To achieve flexible functional electronics, VACNTs based pressure sensor was integrated with field-effect transistor, which is fabricated using sprayed semiconducting carbon nanotubes on plastic substrate.

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