Characteristics of ITO films with oxygen plasma treatment for thin film solar cell applications

• ITO films were prepared on the glass substrate by RF magnetron sputtering method.
• Effects of O2 plasma treatment on the properties of ITO films were investigated.
• The work function of ITO film was changed from 4.67 to 5.66 eV by plasma treatment.

The influence of oxygen plasma treatment on the electro-optical and structural properties of indium-tin-oxide films deposited by radio frequency magnetron sputtering method were investigated. The films were exposed at different O2 plasma powers and for various durations by using the plasma enhanced chemical vapor deposition (PECVD) system. The resistivity of the ITO films was almost constant, regardless of the plasma treatment conditions. Although the optical transmittance of ITO films was little changed by the plasma power, the prolonged treatment slightly increased the transmittance. The work function of ITO film was changed from 4.67 eV to 5.66 eV at the plasma treatment conditions of 300 W and 60 min.

The effect of O2 plasma treatment on the surface and the work function of ITO films.Figure optionsDownload as PowerPoint slide