Microstructure and energy-storage performance of PbO–B2O3–SiO2–ZnO glass added (Pb0.97La0.02)(Zr0.97Ti0.03)O3 antiferroelectric thick films

In this paper, Pb0.97La0.02(Zr0.97Ti0.03)O3 (PLZT 2/97/3) antiferroelectric (AFE) thick films with 0–5 wt.% PbO–B2O3–SiO2–ZnO glass addition were successfully fabricated on alumina substrates via a screen printing method. The effects of the added glass on the microstructure, the dielectric properties, and the energy-storage performance of the PLZT 2/97/3 AFE thick films were investigated in detail. The results showed that the proper addition of glass powders was favor to form a denser microstructure with a pure perovsike phase. As a result, the dielectric properties and the energy-storage performance of AFE thick films were greatly improved by the addition of glass. The maximum recoverable energy-storage density of 3.1 J/cm3 was obtained in 3-wt.% glass-added AFE thick films.

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► Glass added PLZT AFE thick films were fabricated on Al2O3 substrates by screen-printing technique.
► The denser microstructure of PLZT thick films was formed by the addition of glass.
► The dielectric properties and energy-storage performance of PLZT thick films were improved by the addition of glass.