Growth and conduction mechanism of As-doped p-type ZnO thin films deposited by MOCVD

As-doped p-type ZnO thin films were fabricated by metal organic chemical vapor deposition (MOCVD) after in situ annealing in a vacuum. The p-type conduction mechanism was suggested by the analysis of X-ray photoelectron spectroscopy and ultraviolet photoemission spectroscopy. It was found that most of the As dopants in p-ZnO thin films formed AsZn–2VZn shallow acceptor complex, simultaneously, carbon impurities also played an important role in realizing p-type conductivity in ZnO. Substitutional carbon on oxygen site created passivated defect bands by combining with Ga atoms due to the donor-acceptor pair Coulomb binding, which shifted the valence-band maximum upwards for ZnO and thus increased the hole concentration.

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► P-type As-doped ZnO thin films was fabricated by MOCVD after post-growth annealing.
► The formation mechanism of p-ZnO with high hole concentration above 1019 cm−3 was elucidated.
► Besides AsZn–2VZn complex, C impurities also played an important role in realizing p-ZnO.
► The formations of AsO and OCO complex were partially contributed to the p-type ZnO: As films.