کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1489659 | 992310 | 2012 | 4 صفحه PDF | دانلود رایگان |

LiCoO2 thin films were fabricated on Al substrate by direct current magnetron sputtering method. The effects of Ar/O2 gas rates and annealing temperatures were investigated. Crystal structures and surface morphologies of the deposited films were investigated by X-ray diffraction, Raman scattering spectroscopy and field emission scanning electron microscopy. The as-deposited LiCoO2 thin films exhibited amorphous structure. The crystallization starts at the annealing temperature over 400 °C. However, the annealed films have the partially disordered structure without completely ordered crystalline structure even at 600 °C annealing. The electrochemical properties of the LiCoO2 films were investigated by the charge–discharge and cycle measurements. The 500 °C annealing film has the highest capacity retention rate of 78.2% at 100th cycles.
Journal: Materials Research Bulletin - Volume 47, Issue 10, October 2012, Pages 2823–2826