کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1489684 | 992310 | 2012 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Amorphous InGaZnO thin film transistors with SiO2/HfO2 double-layer gate dielectric fabricated at low temperature
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Amorphous InGaZnO thin film transistors with SiO2/HfO2 double-layer gate dielectric fabricated at low temperature Amorphous InGaZnO thin film transistors with SiO2/HfO2 double-layer gate dielectric fabricated at low temperature](/preview/png/1489684.png)
چکیده انگلیسی
Amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) with double-layer gate dielectric were fabricated at low temperature and characterized. A stacked 150 nm-thick SiO2/50 nm-thick HfO2 dielectric layer was employed to improve the capacitance and leakage characteristics of the gate oxide. The SiO2/HfO2 showed a higher capacitance of 35 nF/cm2 and a lower leakage current density of 4.6 nA/cm2 than 200 nm-thick SiO2. The obtained saturation mobility (μsat), threshold voltage (Vth), and subthreshold swing (S) of the fabricated TFTs were 18.8 cm2 V−1 s−1, 0.88 V, and 0.48 V/decade, respectively. Furthermore, it was found that oxygen pressure during the IGZO channel layer deposition had a great influence on the performance of the TFTs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Research Bulletin - Volume 47, Issue 10, October 2012, Pages 2923–2926
Journal: Materials Research Bulletin - Volume 47, Issue 10, October 2012, Pages 2923–2926
نویسندگان
Ji-Hong Kim, Jae-Won Kim, Ji-Hyung Roh, Kyung-Ju Lee, Kang-Min Do, Ju-Hong Shin, Sang-Mo Koo, Byung-Moo Moon,