Physical/chemical properties of tin oxide thin film transistors prepared using plasma-enhanced atomic layer deposition

Thin film transistors (TFTs) with tin oxide films as the channel layer were fabricated by means of plasma enhanced atomic layer deposition (PE-ALD). The as-deposited tin oxide films show n-type conductivity and a nano-crystalline structure of SnO2. Notwithstanding the relatively low deposition temperatures of 70, 100, and 130 °C, the bottom gate tin oxide TFTs show an on/off drain current ratio of 106 while the device mobility values were increased from 2.31 cm2/V s to 6.24 cm2/V s upon increasing the deposition temperature of the tin oxide films.