کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1489739 | 992311 | 2011 | 5 صفحه PDF | دانلود رایگان |
Phosphorus-doped ZnO nanorods have been prepared on Si substrates by thermal evaporation process without any catalyst. X-ray photoelectron spectroscopy and Raman spectra indicate that phosphorus entering into ZnO nanorods mainly occupies Zn site rather than O one. The introduction of phosphorus leads to the morphological changes of nanorods from hexagonal tip to tapered one, which should be attributed to the relaxation of the lattice strain caused by phosphorus occupying Zn site along the radial direction. Transmission electron microscopy shows that phosphorus-doped ZnO nanorods still are single crystal and grow along [0 0 0 1] direction. The effect of phosphorous dopant on optical properties of ZnO nanorods also is studied by the temperature-dependent photoluminescence spectra, which indicates that the strong ultraviolet emission is connected with the phosphorus acceptor-related emissions.
XPS spectra of the P-doped ZnO nanorods: (a) Zn 2p, (b) O 1s, and (c) P 2p spectra. The red curve in Fig. 1c is the Gauss-fitting curve. (d) Raman spectra of P-doped (curve 1) and pure (curve 2) ZnO nanorods.Figure optionsDownload as PowerPoint slideResearch highlights▶ P-doped ZnO nanorods have been prepared on Si substrates without any catalyst. ▶ The introduction of phosphorus leads to the growth of tapered tip in the nanorods. ▶ The formation of tapered tip is attributed to the relaxation of the lattice strain along the radial direction. ▶ The strong ultraviolet peak is connected with the phosphorus acceptor-related emissions.
Journal: Materials Research Bulletin - Volume 46, Issue 4, April 2011, Pages 596–600