کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1489742 | 992311 | 2011 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation and characterization of indium zinc oxide thin films by electron beam evaporation technique
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this work, the preparation of In2O3–ZnO thin films by electron beam evaporation technique on glass substrates is reported. Optical and electrical properties of these films were investigated. The effect of dopant amount and annealing temperature on the optical and electrical properties of In2O3–ZnO thin films was also studied. Different amount of ZnO was used as dopant and the films were annealed at different temperature. The results showed that the most crystalline, transparent and uniform films with lowest resistivity were obtained using 25 wt% of ZnO annealed at 500 °C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Research Bulletin - Volume 46, Issue 4, April 2011, Pages 615–620
Journal: Materials Research Bulletin - Volume 46, Issue 4, April 2011, Pages 615–620
نویسندگان
Reza Keshavarzi, Valiollah Mirkhani, Majid Moghadam, Shahram Tangestaninejad, Iraj Mohammadpoor-Baltork, Hamid Reza Fallah, Mohammad Javad Vahid Dastjerdi, Hamed Reza Modayemzadeh,