Solution-deposited GdCeOx thin films: Microstructure, band structure, and dielectric property

The microstructural and electrical properties of solution-deposited GdCeOx dielectric thin films with different mixing ratios were studied. The Ce incorporation enhanced the degree of crystallization and the refractive index of the Gd2O3 film, reduced the hysteresis and increased the dielectric constant. According to reflective electron energy loss spectroscopy and X-ray photoelectron spectroscopy analyses, the bandgap of the GdCeOx film gradually decreased with increasing Ce/(Gd + Ce) atomic ratio, which was primarily affected by the reduction of the valence band offset.

Figure optionsDownload as PowerPoint slideHighlights
► Microstructural and electrical properties of sol–gel-deposited GdCeOx thin films with different mixing ratios.
► Ce incorporation enhanced crystallization and refractive index, reduced hysteresis, and increased dielectric constant.
► Bandgap gradually decreased with increasing Ce, which was primarily affected by VBO reduction.