Physical properties of amorphous Mo-doped In–Ga–Zn–O films grown by magnetron co-sputtering technique

Amorphous thin films of In–Ga–Zn–O (a-IGZO) doped with Mo have been fabricated by using magnetron co-sputtering technique. The Mo concentration in a-IGZO films was modulated by varying the sputtering power applied on the Mo target. The electrical, optical and magnetic properties of Mo-doped a-IGZO films grown on glasses were investigated. The carrier density and mobility of a-IGZO films can be remarkably enhanced by low concentration Mo doping. On the other hand, the optical bandgap of a-IGZO films is not significantly affected by Mo doping. However, the transmission is decreased with increasing the Mo doping. Moreover, all Mo-doped films exhibit room-temperature ferromagnetism.

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► Mo-doped In–Ga–Zn–O films were fabricated on glass substrates by using magnetron co-sputtering technique.
► The valence of Mo doped in In–Ga–Zn–O films is determined to be 6+ and 4+ by XPS measurements.
► The carrier mobility of In–Ga–Zn–O films can be enhanced by Mo doping.
► The Mo-doped In–Ga–Zn–O films exhibit room-temperature ferromagnetic characteristics.