Nano-crystalline p-ZnGa2Te4/n-Si as a new heterojunction diode

In this communication, ZnGa2Te4 thin film was prepared by thermal evaporation technique on n-Si substrate. P-ZnGa2Te4/n-Si heterojunction diode was fabricated. The structure of ZnGa2Te4 thin film was checked by XRD pattern and confirmed by AFM micrographs. The dark current–voltage characteristics of the heterojunction diode were investigated to determine the electrical parameters and conduction mechanism as a function of forward and reverse biasing conditions in the range (−10 V to 10 V) at temperature interval (303–423 K). The conduction mechanism was controlled by thermionic emission, space charge limited (SCLC) and trap-charge limited current (TCLC) mechanisms. The basic parameters such as the series resistance RsRs, the shunt resistance Rsh, the ideality factor n   and the barrier height ϕbϕb of the diode, the total density of trap states N0 and the exponential trapping distribution Po were determined. The obtained results showed that ZnGa2Te4 is a good candidate for the applications of electronic devices.

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► ZnGa2Te4/Si thin film was prepared by thermal evaporation technique.
► XRD and AFM graphs support the nano-crystalline of the studied device.
► Dark current–voltage characteristics of the heterojunction diode were investigated.
► Electrical parameters and conduction mechanism were determined.
► Conduction mechanisms were controlled by TE, SCLC and TCLC.