کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1489943 992314 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Fast response ultraviolet Ga-doped ZnO based photoconductive detector
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Fast response ultraviolet Ga-doped ZnO based photoconductive detector
چکیده انگلیسی

A metal–semiconductor–metal photoconductive detector was fabricated using high quality Ga-doped ZnO film epitaxially grown onto alumina substrate by spray pyrolysis. The photocurrent increases linearly with incident power density for more than two orders of magnitude. Reflectance and photocurrent measurements were carried out to study optoelectronic properties of Ga-doped ZnO thin film. Both spectra are consistent with each other showing good response in UV than visible region. Peak responsivity of about 1187 A/W at 5 V bias for 365 nm light was obtained in UV region.

Figure optionsDownload as PowerPoint slideHighlights
► Fabrication of photoconductive UV detector by using spray pyrolysis.
► Photoconductive UV detector based on Ga-doped ZnO on alumina with MSM structure.
► I–V characteristic, spectral and transient response of Ga-doped ZnO photodetector.
► Highest responsivity of about 1187 A/W at 5 V bias.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Research Bulletin - Volume 46, Issue 10, October 2011, Pages 1734–1737
نویسندگان
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