کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1490116 992318 2012 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Investigation of nanocrystalline CdS/Si diode using complex impedance spectroscopy
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Investigation of nanocrystalline CdS/Si diode using complex impedance spectroscopy
چکیده انگلیسی

CdS/n-Si device was fabricated via depositing CdS thin film onto pre-cleaned n-silicon substrates. The atomic force microscope was used to examine the crystal size of the deposited films and its roughness. The AC conductivity and the real part of complex impedance Z′as a function of frequency at different temperatures were studied. The AC conductivity dependence of the applied frequency was explained on the basis of the power law relation. The bulk resistance has been calculated at different temperatures from the complex impedance Z″. The temperature dependence of capacitance for CdS/n-Si device at different frequencies was also investigated.

Figure optionsDownload as PowerPoint slideHighlights
► CdS/n-Si device was fabricated as a heterostructure.
► AFM was used to examine the structure of CdS/n-Si.
► Complex impedance Z′and Z″were calculated.
► AC conductivity was explained by the power law relation.
► CBH model was used to describe the AC conduction mechanism.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Research Bulletin - Volume 47, Issue 11, November 2012, Pages 3397–3402
نویسندگان
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