Effects of air annealing on CdS quantum dots thin film grown at room temperature by CBD technique intended for photosensor applications

CdS quantum dots thin-films have been deposited onto the glass substrate at room temperature using modified chemical bath deposition technique. The prepared thin films were further annealed in air atmosphere at 150, 250 and 350 °C for 1 h and subsequently characterized by scanning electron microscopy, ultraviolet–visible spectroscopy, electrical resistivity and I–V system. The modifications observed in morphology and opto-electrical properties of the thin films are presented.

The effect of different intensities (40, 60 100 and 200 W) of light on CdS quantum dots thin film annealed at 350 °C indicating enhancement in (a) photo-current and (b) photosensitivity.Figure optionsDownload as PowerPoint slideHighlights
► The preparation of CdS nanodot thin film at room temperature by M-CBD technique.
► Study of air annealing on prepared CdS nanodots thin film.
► The optimized annealing temperature for CdS nanodot thin film is 350 °C.
► Modified CdS thin films can be used in photosensor application.