کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1490281 | 992321 | 2011 | 4 صفحه PDF | دانلود رایگان |
In the present investigation (Pb0.5Ba0.5)ZrO3 (PBZ) thin films doped by K (KPBZ) from 0 to 5 mol% were successfully deposited on Pt-buffered silicon substrates by a sol–gel method. The K content dependence of microstructure and electrical properties of KPBZ thin films were studied in detail. It was found that, although all the films displayed a pure perovskite structure without obvious difference, the surface roughness of KPBZ films was decreased with increasing K content. Dielectric measurements showed that the figure of merit (FOM) values of KPBZ thin films were greatly increased by K-doping, and at the same time that the temperature-dependent stability was also improved. Thus, K doping is a promising way to optimize the overall electrical properties of PBZ thin films for potential application in tunable devices.
Figure optionsDownload as PowerPoint slideResearch highlights▶ The surface roughness of KPBZ films was decreased with increasing K content. ▶ Dielectric constant and dielectric loss of KPBZ films were reduced by K-doping. ▶ The dielectric tunability and temperature stability of KPBZ films were optimized by K-doping.
Journal: Materials Research Bulletin - Volume 46, Issue 3, March 2011, Pages 420–423