کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1490461 992324 2012 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Microstructural, electrical and optical properties of indium tin oxide (ITO) nanoparticles synthesized by co-precipitation method
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Microstructural, electrical and optical properties of indium tin oxide (ITO) nanoparticles synthesized by co-precipitation method
چکیده انگلیسی

In the present study, the synthesis of Tin doped indium oxide (ITO) nanopowder at different compositions (In/Sn = 0, 5, 10, 15 at %) was carried out by co-precipitation method. The decomposition of precipitated indium tin acetylacetonate precursor to form In2O3–SnO2 (Sn1−xInxO2) at 400 °C was confirmed by the thermal and FTIR studies. The changes in strain and grain size of the synthesized particle with respect to dopant concentration were determined from the X-ray diffraction (XRD) analysis. Transmission electron microscopy (TEM) images support to confirm the grain size. The optical properties on ITO nanoparticles were analyzed with UV–visible spectroscopy, and band gap was found to vary from 3.62 to 3.89 eV with Sn dopant concentration. This variation was ascribed to the quantum confinement effect.

.Figure optionsDownload as PowerPoint slideHighlights
► The grain size of the ITO is decreased from 28.7 to 9.0 nm by increasing Sn dopant.
► The strain values increased with the incorporation of Sn in In2O3 host lattice.
► The lower resistivity of 4.9 Ω cm is obtained for 10 at.% Sn doped ITO.
► The band gap varies from 3.62 to 3.89 eV with dopant concentration of Sn.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Research Bulletin - Volume 47, Issue 4, April 2012, Pages 1051–1056
نویسندگان
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