Epitaxial growth of SnO2 films on 6H-SiC (0 0 0 1) by MOCVD

SnO2 films have been deposited on 6H-SiC (0 0 0 1) substrates by metalorganic chemical vapor deposition in the temperature range 500–750 °C. X-ray diffraction analysis showed that all the films were highly (1 0 0) oriented with the tetragonal rutile structure. Based on the structure analysis, we propose a growth model that SnO2 films consist of three variant structures with equivalent in-plane orientations. The in-plane orientation relationship between SnO2 and 6H-SiC was determined to be SnO2 [0 1 0]//SiC <1 0 1¯ 0> and SnO2 [0 0 1]//SiC <1 2¯ 1 0>. As the substrate temperature increased from 500 to 750 °C, the carrier concentration decreased from 1.1 × 1020 to 1.6 × 1018 cm−3 while the resistivity increased from 0.01 to 0.57 Ω cm.

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► Heteroepitaxial SnO2 films have been successfully deposited on 6H-SiC (0 0 0 1) substrates.
► We propose a growth model that SnO2 films consist of three domains with equivalent in-plane orientations.
► The electrical properties of SnO2 films are in consistent with the structure analysis.