کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1490738 | 992331 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Indium and gallium oxynitrides prepared in the presence of Zn2+ by ammonolysis of the oxide precursors obtained via the citrate route
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Indium and gallium oxynitrides prepared in the presence of Zn2+ by ammonolysis of the oxide precursors obtained via the citrate route Indium and gallium oxynitrides prepared in the presence of Zn2+ by ammonolysis of the oxide precursors obtained via the citrate route](/preview/png/1490738.png)
چکیده انگلیسی
Ammonia nitridation of indium and gallium oxide precursors obtained through a soft solution route led to their oxynitrides [In0.97□0.03][N0.92O0.08] at 660 °C and [Ga0.89□0.11][N0.66O0.34] at 850 °C, respectively, where □ refers to a In or Ga vacancy. Cation vacancies in their wurtzite-type lattice were eliminated in similar preparations with the co-presence of Zn2+ by forming complete solid solutions of (InN)1−x(ZnO)x and (GaN)1−y(ZnO)y. The optical absorption edge shape was found to be relatively steep at the solid solution limits of x ≈ 0.23 and y ≈ 0.33 compared to the case without zinc.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Research Bulletin - Volume 45, Issue 4, April 2010, Pages 505–508
Journal: Materials Research Bulletin - Volume 45, Issue 4, April 2010, Pages 505–508
نویسندگان
Azumi Miyaake, Yuji Masubuchi, Takashi Takeda, Shinichi Kikkawa,