Transient and steady state photoelectronic analysis in TlInSe2 crystals

The temperature and illumination effects on the transient and steady state photoconductivities of TlInSe2 crystals have been studied. Namely, two recombination centres located at 234 and at 94 meV and one trap center located at 173 meV were determined from the temperature-dependent steady state and transient photoconductivities, respectively. The illumination dependence of photoconductivity indicated the domination of sublinear and supralinear recombination mechanisms above and below 160 K, respectively. The change in the recombination mechanism is attributed to the exchange of roles between the linear recombination at the surface and trapping centres in the crystal, which become dominant as temperature decreases. The transient photoconductivity measurement allowed the determination of the capture coefficient of traps for holes as 3.11 × 10−22 cm−2.

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► The steady state and time dependent photoconductivity kinetics of the TlInSe2 crystals are investigated in the temperature region of 100–350 K.
► The photocurrent of the sample exhibited linear, sublinear, and supralinear recombination mechanisms, at, above and below 160 K, respectively.
► Steady state photoconductivity revealed two recombination centres located at 234 and 94 meV.
► The transient photoconductivity is limited by a trapping center located at 173 meV.
► The capture coefficient of the trap for holes was determined as 3.11 × 10−22 cm−2.