کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1490833 992334 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Preparation and characterization of indium doped CdS0.2Se0.8 thin films by spray pyrolysis
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Preparation and characterization of indium doped CdS0.2Se0.8 thin films by spray pyrolysis
چکیده انگلیسی

The CdS0.2Se0.8 and indium doped CdS0.2Se0.8 thin films have been deposited onto the amorphous glass and fluorine doped tin oxide coated glass substrates by spray pyrolysis. The doping concentration of indium has been optimized by photoelectrochemical characterization technique. The structural, surface morphological, optical and electrical properties of CdS0.2Se0.8 and indium doped CdS0.2Se0.8 thin films have been studied. X-ray diffraction studies reveal that the films are polycrystalline in nature with hexagonal crystal structure. Scanning electron microscopy studies reveal that the grains are uniform with uneven spherically shaped, distributed over the entire substrate surface. The complete surface morphology has been changed after doping. In optical studies, the transition of the deposited films is found to be direct allowed with optical energy gaps decreasing from 1.91 to 1.67 eV with indium doping. Semiconducting behavior has been observed from resistivity measurements. The thermoelectric power measurements reveal that the films exhibit n-type conductivity.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Research Bulletin - Volume 45, Issue 10, October 2010, Pages 1455–1459
نویسندگان
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