کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1491503 | 992352 | 2008 | 7 صفحه PDF | دانلود رایگان |
Cetyltrimethyl ammonium bromide (CTAB) templated mesoporous indium tin oxide (ITO) thin films were deposited on quartz plates by an evaporation-induced self-assembly (EISA) process using a dip coating method. The starting solution was prepared by mixing indium chloride, tin chloride, and CTAB dissolved in ethanol. Five to fifty mole percent Sn-doped ITO films were prepared by heat-treatment at 400 °C for 5 h. The structural, adsorptive, electrical, and optical properties of mesoporous ITO thin films were investigated. Results indicate that the mesoporous ITO thin films have an ordered two-dimensional hexagonal (p6mm) structure, with nanocrystalline domains in the inorganic oxide framework. The continuous thin films have highly ordered pore sizes (>20 Å), high Brunauer–Emmett–Teller (BET) surface area up to 340 m2/g, large pore volume (>0.21 cm3/g), outstanding transparency in the visible range (>80%), and show a minimum resistivity of ρ = 1.2 × 10−2 Ω cm.
Journal: Materials Research Bulletin - Volume 43, Issue 4, 1 April 2008, Pages 1016–1022