Thermoelectric crystals Bi2Te2.88Se0.12 undoped and doped by CdCl2 or CdBr2 impurities, fabricated and characterized by XRD and Hall effect

Empirical studies on the fabrication of thermoelectric element Bi2Te2.88Se0.12 undoped and doped by 0.08 wt.% CdCl2 or CdBr2 have been carried out. Zone melting method was employed to crystallize the solid solutions of the compounds. Structural characteristics of the grown crystals were examined by XRD technique. Measurements of thermoelectric parameters, such as electrical conductivity and Seebeck coefficient, showed a continuous deviation of the composition along the crystal growth direction. Effects of an impurity as a dopant on thermoelectric parameters were studied. Finally, Hall effect system was used to measure free carrier concentration and their mobility at 300 K. Results showed a significant increment on α2σ, due to dopant addition.