کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1492223 992373 2007 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Piezoelectric properties of Bi4Ti3O12 thin films annealed in different atmospheres
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Piezoelectric properties of Bi4Ti3O12 thin films annealed in different atmospheres
چکیده انگلیسی

Bismuth titanate (Bi4Ti3O12—BIT) films were evaluated for use as lead-free piezoelectric thin-films in micro-electromechanical systems. The films were grown by the polymeric precursor method on Pt/Ti/SiO2/Si (1 0 0) (Pt) bottom electrodes at 700 °C for 2 h in static air and oxygen atmospheres. The domain structure was investigated by piezoresponse force microscopy (PFM). Annealing in static air leads to better ferroelectric properties, higher remanent polarization, lower drive voltages and higher piezoelectric coefficient. On the other hand, oxygen atmosphere favors the imprint phenomenon and reduces the piezoelectric coefficient dramatically. Impedance data, represented by means of Nyquist diagrams, show a dramatic increase in the resistivity for the films annealed in static air atmopshere.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Research Bulletin - Volume 42, Issue 5, 3 May 2007, Pages 967–974
نویسندگان
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