Graphene-GaAs-graphene stacked layers for the improvement of the transmission at the wavelength of 1.55 μm

• GaAs-based transmission filter operating at the wavelength of 1.55 μm with only 30% transmission is presented.
• Addition of a graphene layer at each interface allows the active control of the transmission.
• Transmission of almost 100% at the wavelength of 1.55 μm is achieved in the vicinity of near zero epsilon graphene.
• These results show the potential role of stacked graphene-GaAs-graphene layers in the development of optical active devices.

Transmission filter operating at the wavelength of 1.55 μm and based on stacked graphene-GaAs-graphene layers separated by air gaps is presented. By using the transfer matrix method (TMM), we show that the addition of a graphene layer at each interface of a GaAs-based stratified structure, which initially exhibit only 30% transmission at 1.55 μm, allows the active control of the transmission by the adjustment of the graphene chemical potential. Transmission of almost 100% at the wavelength of 1.55 μm is achieved after addition of graphene layers. These results show the potential role of stacked graphene-GaAs-graphene layers in the development of new optical active communications devices.