Light induced resistive switching property of solution synthesized ZnO nanorod

• Successfully fabricated two terminal devices using Solution synthesized ZnO nanorods.
• Lithography and lift-off process used to define metal contacts.
• It is first report on light induced switching property of Solution synthesized ZnO.
• Showed excellent photo-response with the light/dark (on/off) current ratio >8.85.

We report the light induced switching property of solution synthesized ZnO nanorod. Unlike the ZnO thin film based vertical devices, this nanorod based planar devices are very interesting for nanolevel sensor and memory devices. Semiconductor nanowire based resistive memories are also potential for next generation ultra-dense nonvolatile memories. ZnO nanorod based Au/ZnO NR/Au planar device was fabricated using lithographically patterned metal contacts. Electrical characterization of the device exhibits light induced switching property; it is an interesting phenomenon which could be used in light controlled nonvolatile memory devices. Controlling the device using optical signal is particularly interesting because, light signal can be sent remotely for longer distance than electrical signals. The fabricated devices are found to show good photoconductivity response. I–V characterization and mechanism of the light induced switching property of the device is reported in this work. It is the first report on the light induced switching property of solution synthesized single ZnO nanorod in planar device configuration.

Figure optionsDownload high-quality image (189 K)Download as PowerPoint slide