Thermal Tb emission quenching in YAlO3 matrix embedded in porous anodic alumina

• We investigated the temperature dependence of Tb3+ ions in the PAA:YAP structure.
• The quenching mechanism depends on the terbium concentration.
• We propose the physical model to describe obtained results.

Terbium doped YAlO3 composites were fabricated by the co-precipitation method in a porous anodic alumina (PAA) films grown on silicon at three different Tb concentrations: 0.23, 0.87 and 2.11 at.%. To investigate the emission thermal quenching for all samples, we measured the emission spectra as a function of temperature in the range from 10 up to 500 K at 266 and 488 nm excitation wavelengths. Based on obtained results we proposed the physical model explaining the mechanism of Tb3+ emission quenching in YAlO3 composites deposited into PAA film.