Influence of growth temperature on physical properties of ZnO films produced by pulsed laser deposition method

The dependence has been investigated of electrical, optical and structural properties of undoped ZnO films grown on single-crystal c-sapphire substrates by pulsed laser deposition on the substrate temperature in the range between 50 °С and 650 °С. It has been shown that an increase in energy density of laser radiation at the target surface leads to lowering of the temperature of epitaxial growth of zinc oxide films. The surface roughness of the films produced at the substrate temperature of 450 °C does not exceed several monolayers, and the width of X-ray diffraction peaks 2Θ at half maximum near the lattice site (00.2) makes 0.035°.