Temperature and excitation intensity tuned photoluminescence in Ga0.75In0.25Se crystals

► The photoluminescence measurements on Ga0.75In0.25Se crystals have been carried out. ► Two peaks were observed at EA = 613 nm (2.02 eV) and EB = 623 nm (1.99 eV). ► Temperature and excitation intensity dependence of the PL spectra were analyzed. ► Activation energies of donor and acceptor levels were calculated.