Flexible organic field-effect transistors and complementary inverters based on a solution-processable quinoidal oligothiophene derivative

We report on the fabrication and characterization of ambipolar organic field-effect transistors based on the solution-processable quinoidal oligothiophene [QQT(CN)4] and using a new fluorinated polymer (AL-X601) with a dielectric constant of 3.1 as dielectric material layer. As-prepared devices show ambipolar transport with hole and electron field-effect mobilities of 6 × 10−2 and 5 × 10−3 cm2/V s respectively as well as an on and off state current ratio higher than 103. Influence of a thermal annealing on the device performances was investigated and was found to lead to a majority carrier type conversion from a p-type to an n-type dominant behavior. QQT(CN)4 based field-effect transistors and complementary inverters fabricated on flexible substrates and using Al-X601 as gate dielectric material show high performance and good mechanical stability.

Our work demonstrates the realization of flexible ambipolar organic transistors and inverters using a new fluorinated gate dielectric polymer.Figure optionsDownload high-quality image (110 K)Download as PowerPoint slideHighlights
► Fabrication of organic transistors using a new gate dielectric polymer.
► A quinoidal oligothiophene derivative was used as organic semiconductor.
► Majority carrier type conversion achieved by simple thermal annealing.
► Realization of flexible organic field-effect transistors and CMOS inverters.
► Very good mechanical stability of the flexible devices upon bending.