کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1496047 | 992953 | 2009 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Photoluminescence properties of 4,5-dimethyl-4â²,5â²-di(methylamido) tetrathiafulvalene thin film grown by thermal evaporation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this paper, a temperature dependence study of photoluminescence spectra of vacuum-deposited organic donor tetrathiafulvalene: 4,5-dimethyl-4â²,5â²-di(methylamido) tetrathiafulvalene thin layers is presented. The investigated layers were deposited in a high vacuum (2Â ÃÂ 10â6 Torr) using molecular beam deposition (MBD) technique on n-doped (1Â 1Â 1) oriented silicon substrates. The photoluminescence studies were carried out in the temperatures range [13Â K-325Â K]. Under a 325Â nm wavelength light excitation and at low-temperature a broad luminescence emission peak was observed in the UV-Visible and 2 peaks in the near infrared region. The photoluminescence spectra exhibit temperature dependence with a maximum emission at 180Â K. Furthermore, an enhancement of the photoluminescence signal under a continuous excitation was observed at room temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 31, Issue 6, April 2009, Pages 831-836
Journal: Optical Materials - Volume 31, Issue 6, April 2009, Pages 831-836
نویسندگان
Z. Essaïdi, W. BaÅa, I. Rau, C. Meziere, P. Batail, B. Sahraoui,