کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1496252 | 992958 | 2011 | 4 صفحه PDF | دانلود رایگان |
We obtained room-temperature red emission from GaN-based light-emitting diodes (LEDs) using a Eu-doped GaN (GaN:Eu) as an active layer. The bright emission was observed under normal lighting condition, which is associated with the intra-4f shell transition of Eu3+ ions. The LED properties depends on the growth condition of GaN:Eu layer. Since the high-quality GaN can be grown at higher growth pressure, the intense electroluminescence (EL) was observed in the LED with a GaN:Eu active layer grown at atmospheric pressure, which is due to the enhancement of the energy transfer efficiency from the GaN host material to the Eu ions. At a d.c. current of 20 mA, the light output power and external quantum efficiency were 17 μW and 0.04%, respectively. These results indicate the feasibility of GaN:Eu to realize a GaN-based red emitter for fabrication of nitride-based monolithic optical devices.
Journal: Optical Materials - Volume 33, Issue 7, May 2011, Pages 1071–1074