Cubic MgxZn1−xO films grown on SiO2 substrates

Cubic MgxZn1−xO thin films were deposited on amorphous silicon dioxide substrate by reactive electron beam evaporation (REBE) at low temperature (250 °C). The characterizations of crystalline structure and morphology of the ternary films demonstrated that the cubic MgxZn1−xO films are of highly (0 0 1) orientation and have uniform surface. The cubic Mg0.83Zn0.17O film deposited on quartz demonstrates wide band gap (6.45 eV) and has very high transparency (>95%) in broad wavelength range from ultraviolet (0.3 μm) to mid-infrared light (5.5 μm). The refractive indices for the cubic MgxZn1−xO decrease as Mg fraction increases. The characters of low optical absorption in broad wavelength range and feasibility of changing refractive index by Mg fraction variation in the ternary MgxZn1−xO films could render potential applications in integrated optical devices.