Si/Sb superlattice-like thin films for ultrafast and low power phase change memory application

After compositing with Si, the superlattice-like (SLL) Si/Sb thin film had higher crystallization temperature (~ 231 °C), larger crystallization activation energy (2.95 eV), and better data retention ability (126 °C for 10 years). The crystallization of Sb in SLL Si/Sb thin films was restrained by the multilayer interfaces. The reversible resistance transition could be achieved by an electric pulse as short as 10 ns for [Si(22 nm)/Sb(2 nm)]2-based PCM cell. A lower operation power consumption of 0.02 mW and a good endurance of 1.0 × 105 cycles were achieved. In addition, SLL [Si(22 nm)/Sb(2 nm)]2 thin film showed a low thermal conductivity of 0.11 W/(m·K).

After compositing with Si, the superlattice-like (SLL) Si/Sb thin film had higher crystallization temperature (~ 231 °C), larger crystallization activation energy (2.95 eV), and better data retention ability (126 °C for 10 years). The crystallization of Sb in SLL Si/Sb thin films was restrained by the multilayer interfaces. The reversible resistance transition could be achieved by an electric pulse as short as 10 ns for [Si(22 nm)/Sb(2 nm)]2-based PCM cell. A lower operation power consumption of 0.02 mW and a good endurance of 1.0 × 105 cycles were achieved.Figure optionsDownload high-quality image (113 K)Download as PowerPoint slide