Keywords: حافظه تغییر فاز; Phase Change Memory; Recessed Cell Structure; RESET Tail; RESET Current;
مقالات ISI حافظه تغییر فاز (ترجمه نشده)
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Keywords: حافظه تغییر فاز; Phase Change Memory; Ovonic memory; Threshold switching; Chalcogenide; Non-volatile memory; Emulator; Discrete component;
Keywords: حافظه تغییر فاز; Carbon materials; Physical vapor deposition; Thermal analysis; Phase change memory;
Keywords: حافظه تغییر فاز; Storage class memory; Memory management; Block device support; Phase change memory; Byte-addressable direct I/O,;
Keywords: حافظه تغییر فاز; Phase change memory; Transient thermal dissipation model; Thermal energy accumulation effect; Time constant; Thermal resistance; Thermal capacity;
Keywords: حافظه تغییر فاز; Phase change memory; Lateral structure; Angle evaporation; Finite element simulation
Keywords: حافظه تغییر فاز; Phase Change Memory; Non-volatile memory technology; Low power design; Memory lifetime enhancement
Keywords: حافظه تغییر فاز; Crystallization kinetics; Finite size; Phase-field method; Phase change memory
Keywords: حافظه تغییر فاز; Phase change memory; recrystallization; multilevel storage
Keywords: حافظه تغییر فاز; Phase change materials; Phase change memory; Resistive memories;
Keywords: حافظه تغییر فاز; Nanoimprint lithography; Flexible nano-device; Phase change nano-pillar device; Phase change memory; Tera-bit record
Keywords: حافظه تغییر فاز; Superlattice-like; High speed; Low power; Phase change memory
Al-Sb-Ge phase change material: A candidate for multilevel data storage with high-data retention and fast speed
Keywords: حافظه تغییر فاز; High stability; Fast speed; Multilevel data storage; Phase change memory;
Controllable multilevel resistance state of superlattice-like GaSb/Ge2Te films for ultralong retention phase-change memory
Keywords: حافظه تغییر فاز; Superlattice-like; Controllable multilevel; Phase change memory; Ultralong data retention;
Adaptive-Classification CLOCK: Page replacement policy based on read/write access pattern for hybrid DRAM and PCM main memory
Keywords: حافظه تغییر فاز; Hybrid main memory; Phase change memory; Non-volatile memory; AC-CLOCK; CLOCK; Read/write access pattern;
Study on the phase change behavior of nitrogen doped Bi2Te3 films
Keywords: حافظه تغییر فاز; Phase change memory; Bi2Te3; N doping;
Preparation and characterization of indium chalcogenide thin films: A material for phase change memory
Keywords: حافظه تغییر فاز; Indium chalcogenide; Phase change memory; Band gap energy; Resistivity; Carrier concentration; Carrier mobility; Activation energy;
Superlattice-like GeTe/Sb thin film for ultra-high speed phase change memory applications
Keywords: حافظه تغییر فاز; GeTe/Sb thin film; Ultra-high speed; Phase change memory;
Scalable CGeSbTe-based phase change memory devices employing U-shaped cells
Keywords: حافظه تغییر فاز; Phase change memory; Carbon germanium antimony telluride; Reset current; Program volume; Scalability;
Crystallization properties of Sb-rich GeSbTe alloys by in-situ morphological and electrical analysis
Keywords: حافظه تغییر فاز; Phase Change Memory; Crystallization kinetic; Nanodot; TEM; XRD;
Crystal structure assessment of Ge-Sb-Te nanowires
Keywords: حافظه تغییر فاز; Phase change memory; Nanowires; STEM-HAADF; Chalchogenide; Simulations;
Direct evidence of reactive ion etching induced damages in Ge2Sb2Te5 based on different halogen plasmas
Keywords: حافظه تغییر فاز; Ge2Sb2Te5; Reactive ion etching; Etch damage; Phase change memory;
Improved phase change behavior of Sb2Se material by Si addition for phase change memory
Keywords: حافظه تغییر فاز; Sb2Se; Si addition; High speed; Thermal stability; Phase change memory;
SnSb4/SiO2 multilayered thin films for phase change memory applications
Keywords: حافظه تغییر فاز; Multilayer thin film; Thermal stability; Power consumption; Phase change memory
Exploring the applicability of amorphous films of system In-Sb-Te as phase change materials
Keywords: حافظه تغییر فاز; Chalcogenides; In-Sb-Te; Films; Electrical resistivity; Phase change memory
A compiler assisted wear leveling for morphable PCM in embedded systems
Keywords: حافظه تغییر فاز; Phase change memory; Wear-leveling; Endurance; Embedded systems;
Phase Change Memory: Device scaling and challenges for material engineering in the GeSbTe compound system
Keywords: حافظه تغییر فاز; Phase Change Memory; Scaling; Material engineering;
Thickness dependent nano-crystallization in Ti0.43Sb2Te3 films and its effect on devices
Keywords: حافظه تغییر فاز; Phase change memory; Thickness dependence; Ti0.43Sb2Te3;
Study on the phase change material Cr-doped Sb3Te1 for application in phase change memory
Keywords: حافظه تغییر فاز; Phase change memory; Cr doped Sb3Te1; Low-power; High-speed
Linked Block-based Multiversion B-Tree index for PCM-based embedded databases
Keywords: حافظه تغییر فاز; Phase change memory; Multi-version index; Cyber-physical systems; Embedded systems
Preparation and characterization of Ge1Sb2Te4 thin films for phase change memory applications
Keywords: حافظه تغییر فاز; Chalcogenide; Ge1Sb2Te4; Phase change memory; Electrical characteristics; Non volatile memories
Superlattice-like Ge8Sb92/Ge thin films for high speed and low power consumption phase change memory application
Keywords: حافظه تغییر فاز; Superlattice-like Ge8Sb92/Ge thin films; Phase change speed; Power consumption; Phase change memory
Physico-chemical properties of the thin films of the SbxSe100 − x system (x = 90, 85, 80)
Keywords: حافظه تغییر فاز; Thin films; Antimony–selenium; Antimony-rich; Phase change memory; Thermal flash evaporation
The effect of Se doping on spectroscopic and electrical properties of GeTe
Keywords: حافظه تغییر فاز; Phase change memory; XRD; XPS; Raman spectroscopy;
A space allocation and reuse strategy for PCM-based embedded systems
Keywords: حافظه تغییر فاز; Phase change memory; Wear-leveling; Endurance; Non-volatile memory; Embedded systems
Assisted cubic to hexagonal phase transition in GeSbTe thin films on silicon nitride
Keywords: حافظه تغییر فاز; Phase change memory; Germanium-antimony-tellurium; Phase transition temperature; Face-centered cubic; Hexagonal close-packed; Substrate dependence; Silicon nitride; Silicon dioxide;
Precursors as enablers of ALD technology: Contributions from University of Helsinki
Keywords: حافظه تغییر فاز; acac; acetylacetonate; ALD; atomic layer deposition; CET; capacitance equivalent thickness; CHT; cycloheptatrienyl; CHD; cyclohexadiene; CMOS; complementary metal oxide semiconductor; CN; coordination number; Cp; cyclopentadienide; COD; cyclooctadiene; CV
Fast crystallization and low power of Al-doped Sn2Se3 thin films for phase change memory applications
Keywords: حافظه تغییر فاز; Sn2Se3 thin films; Fast crystallization; Low power; Phase change memory
Improved performance of In2Se3 nanowire phase-change memory with SiO2 passivation
Keywords: حافظه تغییر فاز; In2Se3 nanowire; Phase change memory; SiO2 passivation; Chalcogenide; Low frequency noise
Phase change behavior and critical size of Ge2Sb2Te5 nanowires and nanotubes
Keywords: حافظه تغییر فاز; Phase change memory; Nanoscale; Critical size; Melting; Crystallization; Ge2Sb2Te5
Addition of HfO2 interface layer for improved synaptic performance of phase change memory (PCM) devices
Keywords: حافظه تغییر فاز; Phase change memory; Bio-inspired computing; Spike time dependent plasticity; Visual pattern extraction; Interface engineering
Structural Changes in Doped Ge2Sb2Te5 Thin Films Studied by Raman Spectroscopy
Keywords: حافظه تغییر فاز; Raman scattering spectroscopy; Chalcogenide thin film; GST225; Phase change memory; Doping;
Superlattice-like GaSb/Sb2Te3 films for low-power phase change memory
Keywords: حافظه تغییر فاز; Phase change memory; Multilayers; Electric resistivity; Simulation
Investigation of inter-diffusion in bilayer GeTe/SnSe phase change memory films
Keywords: حافظه تغییر فاز; Phase change memory; Chalcogenides; GeTe; SnSe
Dynamic switching characteristic dependence on sidewall angle for phase change memory
Keywords: حافظه تغییر فاز; Phase change memory; Critical dimension; Sidewall angle; Thermo-electric simulation
Role of hydrogen in Sb film deposition and characterization of Sb and GexSby films deposited by cyclic plasma enhanced chemical vapor deposition using metal-organic precursors
Keywords: حافظه تغییر فاز; Phase change memory; Germanium antimonide; Sb-incorporated GeSb; Plasma enhanced chemical vapor deposition
Thermal strain imaging of chalcogenide in a phase change memory
Keywords: حافظه تغییر فاز; Strain imaging; Scanning probe microscope; Phase change memory; Thermal strain
Nitrogen incorporated GeTe phase change thin film for high-temperature data retention and low-power application
Keywords: حافظه تغییر فاز; Phase change memory; GeTeN film; Power consumption; Data retention
N-doped Sb2Te phase change materials for higher data retention
Keywords: حافظه تغییر فاز; Phase change memory; Sb2Te; Sb2TeN; Data retention
Nano composite Si2Sb2Te film for phase change memory
Keywords: حافظه تغییر فاز; Nano composite; Si2Sb2Te; Phase change memory;