کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8035706 | 1518054 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The effect of Se doping on spectroscopic and electrical properties of GeTe
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
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چکیده انگلیسی
Selenium doped thin films of GeTe alloys were investigated for their structural modifications by X-ray Diffraction, Fourier Transform Infrared Spectroscopy, X-ray photoelectron Spectroscopy (XPS) and Raman Spectroscopy. The band gap increase from 0.69 to 1.10Â eV with increasing Se addition signifies the possibility of band gap tuning in the material. Disorder decreases, band widens and conductivity saturates about 0.20Â at.% of Se addition. Structural changes are explained by the bond theory of solids. The as-deposited films are amorphous and 0.50Â at.% Se alloy forms a homogeneous amorphous phase with a mixture of GeSe and TeSe bonds. The XPS core level spectra and Raman spectra investigation clearly indicate the formation of GeSe, GeTe2 and TeSe bonds with Se addition. Crystallization temperature is found to be increasing with Se and the 0.10Â at.% Se alloy is found to have a higher resistance contrast compared to other Se concentration alloys. Up to 0.10Â at.% of Se addition can enhance GeTe phase change memory properties.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 550, 1 January 2014, Pages 569-574
Journal: Thin Solid Films - Volume 550, 1 January 2014, Pages 569-574
نویسندگان
E.M. Vinod, K.S. Sangunni,