Improved phase change behavior of Sb2Se material by Si addition for phase change memory

Compared with Sb2Se, Si-Sb-Se material possesses higher crystallization temperature, indicating better thermal stability. The growth dominated crystalline mechanism makes Si-Sb-Se-based phase change memory device can have fast SET/RESET speed (8 ns). Si-Sb-Se material is proved to be a promising candidate for phase change memory with good thermal stability and high phase change speed.127