Superlattice-like GaSb/Sb2Te3 films for low-power phase change memory

The crystallization temperature of superlattice-like GaSb/Sb2Te3 films can be easily changed by the number of interfaces and thickness ratio between GaSb and Sb2Te3 layers. The reset operation can be completed by an electric pulse as short as 20 ns for the GaSb(4 nm)/Sb2Te3(6 nm)-based phase-change memory test cell. This test cell exhibited endurance up to 1.4 × 104 cycles. The thermal simulation confirmed that the improved performance of superlattice-like GaSb/Sb2Te3 films originated from the low thermal conductivity and low melting point.