کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7833581 | 1503523 | 2018 | 29 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation and characterization of indium chalcogenide thin films: A material for phase change memory
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The versatile resistive switching behavior of metal chalcogenide thin films is highly desired for the fabrication of phase change memory (PCM) - electronic devices. The In2(Te1-xSex)3 thin films might be one of the prime candidates for the application of PCM devices. In this paper, the effects of Se-Te in the phase change characteristics of In-Se-Te material are investigated by X-ray diffraction, Field emission scanning electron microscopy, the I-V measurement and the optical transmittance. The resistance ratio between the amorphous and crystalline states of In2(Te0.98Se0.02)3, In2(Te0.94Se0.06)3 and In2(Te0.90Se0.1)3 thin films are about two orders of magnitude. The stoichiometric phase change from In2(Te1-xSex)3 to In2Se3 and In2Te3 phases in all the samples have been observed from the temperature dependent I-V characteristics. The electrical switching occurs at 80â¯Â°C, Further rise in temperature leads no change in the threshold voltage after switching. For the In2(Te0.98Se0.02)3, In2(Te0.94Se0.06)3 and In2(Te0.90Se0.1)3 films, the forward biased current/threshold voltages are found to be about 8â¯Î¼A/4.2â¯V, 6â¯Î¼A/3.00â¯V and 4â¯Î¼A/2.8â¯V respectively. The In2(Te1-xSex)3 thin film showed the high resistance state at low voltage region. However, when it reaches the threshold voltage, the resistance drastically reduced through the formation of conducting path. From these studies, it can be concluded that the effective way to enhance the comprehensive performance of In-Se-Te system is by varying the concentrations of the Te and Se and it may find potential application in switching volatile PCM devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 449, 15 August 2018, Pages 55-67
Journal: Applied Surface Science - Volume 449, 15 August 2018, Pages 55-67
نویسندگان
M. Pandian, P. Matheswaran, B. Gokul, R. Sathyamoorthy, K. Asokan,