کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5441530 | 1510389 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Superlattice-like GeTe/Sb thin film for ultra-high speed phase change memory applications
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The GeTe/Sb superlattice-like thin films are systematically investigated for the potential application in phase change memory. Compared with GeTe, GeTe/Sb film has lower crystallization temperature and activation energy. Besides, the internal stress of GeTe/Sb is less than GeTe during the crystallization. The superlattice-like structure is observed by transmission electron microscopy. The polycrystalline phase is confirmed by selected area electron diffraction. The reversible resistance switching can be realized for GeTe/Sb-based phase change memory device with an electric pulse of 8Â ns width. In addition, GeTe/Sb shows a good endurance of 6.3Â ÃÂ 106Â cycles.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Non-Crystalline Solids - Volume 457, 1 February 2017, Pages 141-144
Journal: Journal of Non-Crystalline Solids - Volume 457, 1 February 2017, Pages 141-144
نویسندگان
Yifeng Hu, Haipeng You, Xiaoqin Zhu, Hua Zou, Jianhao Zhang, Sannian Song, Zhitang Song,