Nitrogen incorporated GeTe phase change thin film for high-temperature data retention and low-power application

The crystallization temperature of GeTe film increases markedly from 187 to 372 °C as a result of 9.81 at.% nitrogen doping, and a rhombohedral–rocksalt phase transition is observed in both GeTe and nitrogen-doped GeTe (GeTeN) films. Up to 105 cycles of endurance for phase change memory (PCM) cells based on GeTeN have been achieved. Extrafine data retention (10 years at 241 °C) and relatively low power consumption suggest GeTeN as a promising alternative material to improve the performance of PCM.