کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1787831 1023452 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Thermal strain imaging of chalcogenide in a phase change memory
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Thermal strain imaging of chalcogenide in a phase change memory
چکیده انگلیسی

Thermal strain imaging using a scanning probe microscope enables us to observe thermal distribution with high resolution. A phase change memory (PCM) based on chalcogenide glasses switches their two stable states having low and relatively high resistances by Joule heating. Images obtained by thermal strain imaging revealed that Joule heating was mainly generated in particular regions and some boundaries. The large fluctuation of increases in temperature in the active area should greatly affect phase change in PCM.

Research highlights
► This paper describes our original method for high resolution imaging of rising temperature, and reveals local heating in a phase change memory.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 11, Issue 3, May 2011, Pages 731–734
نویسندگان
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