کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1498277 | 1510919 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dislocation-mediated coupling mechanism between the microstructural defects and Te inclusions in CdZnTe single crystals
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The dislocation-mediated coupling mechanism between the microstructural defects and Te inclusions in CdZnTe crystal have been investigated through the defect-selective etching and cathodoluminescence (CL). The enrichment of well-arranged dislocation-related defects was found around the Te inclusions. A dislocation-mediated defects interaction model was proposed and native deep-level defects were considered to be associated with induced dislocation motions, showing as a dark CL contrast. The spatial arrangement of the microstructural defects were confined to a stellated octahedron.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Scripta Materialia - Volume 82, 1 July 2014, Pages 17–20
Journal: Scripta Materialia - Volume 82, 1 July 2014, Pages 17–20
نویسندگان
Yihui He, Wanqi Jie, Yadong Xu, Yuecun Wang, Yan Zhou, Huimin Liu, Tao Wang, Gangqiang Zha,